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Gallium Arsenide (GaAs) Wafer Zn-Doped 2

Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2

Gallium Arsenide (GaAs) Wafer Si-Doped 2

Product information: 1) mainly used in a variety of materials, nano materials, semiconductor manufacturing process, Photo, DIFF, WET / Etch, Eglass, Nickel and other processes of 2 to 12-inch wafer processing; 2) the main process: customized according to customer demand using HF/HNO3/HCL / H3PO4/H…

Product information: 1) mainly used in a variety of materials, nano materials, semiconductor manufacturing process, Photo, DIFF, WET / Etch, Eglass, Nickel and other processes of 2 to 12-inch wafer processing; 2) the main process: customized according to customer demand using HF/HNO3/HCL / H3PO4/H…

Product information: 1) mainly used in a variety of materials, nano materials, semiconductor manufacturing process, Photo, DIFF, WET / Etch, Eglass, Nickel and other processes of 2 to 12-inch wafer processing; 2) the main process: customized according to customer demand using HF/HNO3/HCL / H3PO4/H…

Product information: 1) mainly used in a variety of materials, nano materials, semiconductor manufacturing process, Photo, DIFF, WET / Etch, Eglass, Nickel and other processes of 2 to 12-inch wafer processing; 2) the main process: customized according to customer demand using HF/HNO3/HCL / H3PO4/H…

Product information: 1) mainly used in a variety of materials, nano materials, semiconductor manufacturing process, Photo, DIFF, WET / Etch, Eglass, Nickel and other processes of 2 to 12-inch wafer processing; 2) the main process: customized according to customer demand using HF/HNO3/HCL / H3PO4/H…

Product information: 1) mainly used in a variety of materials, nano materials, semiconductor manufacturing process, Photo, DIFF, WET / Etch, Eglass, Nickel and other processes of 2 to 12-inch wafer processing; 2) the main process: customized according to customer demand using HF/HNO3/HCL / H3PO4/H…

Gallium Arsenide (GaAs) Si-doped Wafer 2” 3” 4” at Western Minmetals (SC) Corporation Diameter: 50.8+/- 0.2, 76.2+/-0.3, 100+/-0.3 mm Dopant: Silicon Conduct Type: SC/N Growth Method: VGF Thickness: 220-350+/-20 um Crystal Orientation: <10…

Gallium Arsenide (GaAs) Un-doped Semi-insulating Mechanical Grade Substrate 2’’ 3’’ 4’’ 6’’ at Western Minmetals (SC) Corporation Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm 150+/-0.5mm Growth Metho…

Gallium Arsenide (GaAs) Un-doped Semi-insulating wafer (substrate) 2” 3” 4” 6’’ at Western Minmetals (SC) Corporation Diameter: 50.8+/-0.2mm, 76.2+/-0.3mm, 100+/-0.5mm 150+/-0.5mm Growth Method: VGF Dopant: None Thickness: 350-625+…

This wide range of CO2 plano-convex lenses have been prepared to fit most OEM, Industrial and Medical laser systems. All have been manufactured to high-quality laser specifications for high-power applications. Made with laser grade zinc selenide with computer optimized anti-reflection coatings. …

EXCELLENT INTEGRATED SYSTEM LIMITED is a professional stocking distributor of MGFS45V2527 MITSUBISHI all semiconductor. Detailed Description of MGFS45V2527: EIS Part Number EIS-MGFS45V2527 Manufacturer Part Number MGFS45V2527 Manufacturer / Brand MITSUBISHI Brief Description 2.5-2.7GHz BAN…

Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3” Conduct Type S-C-N , VGF growth, EPI-Ready Diameter Ø50.7 ± 0.2 Orientation (100)0±0.50 Thickness 350±25um, 625±25um Primary Flat EJ [0 -1 -1] ±0.50 Length 16+/-1mm, 22+/-2 mm Secondary Flat EJ [0 1 -1] ±0.50 Length 8+/-1mm,16+/-2mm Carrier Conce…

Gallium Arsenide (GaAs) Wafer Zn-Doped 2” 3” Conduct Type SC/P, EPI-Ready Diameter Ø50.8± 0.2, 76.2 ± 0.2mm Orientation (100) 2°±0.5° to (110);α=45° Thickness 350±25um, 625±25um Primary Flat EJ [0 -1 -1] Length 16+/-2m, 22+/-2 mm Secondary Flat EJ [0 1 -1] Length 8+/-1mm,16+/-2mm Carrier Co…

Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3” Conduct Type N, VGF growth, EPI-Ready Diameter 50.8±0.2 mm, 76.2±0.3 mm Thickness350±25µm, 625+/-25um Orientation (100)0±0.50 Primary Flat EJ [0-1-1] ±0.50 Length16±1 mm, 22±2mm Secondary Flat EJ [0 -1 1] ±0.50 length7±1mm, 12±2mm …